1
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
When $$npn$$ transistor is used as an amplifer
A
electrons move from collector to base
B
holes move from emitter to base
C
electrons move from base to collector
D
holes move from base to emitter
2
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
For a transistor amplifier in common emitter configuration for load impedance of $$1k\,\Omega $$ $$\left( {{h_{fe}} = 50} \right.$$ and $$\left. {{h_{oe}} = 25} \right)$$ the current gain is
A
$$-24.8$$
B
$$-15.7$$
C
$$-5.2$$
D
$$-48.78$$
3
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
A
crystal structure
B
variation of the number of charge carries with temperature
C
type of bonding
D
variation of scattering mechanism with temperature
4
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
In the middle of the depletion layer of a reverse- biased $$p$$-$$n$$ junction, the
A
electric field is zero
B
potential is maximum
C
electric field is maximum
D
potential is zero

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