Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R

Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.

Reason R : For a p-n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for $$\mathrm{|{V_z}| > \pm v \ge |{v_0}|}$$ where $$\mathrm{v_0}$$ is the threshold voltage and $$\mathrm{V_z}$$ is the breakdown voltage.

In the light of the above statements, choose the correct answer from the options given below

The logic gate equivalent to the given circuit diagram is :

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R

Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.

Reason R : The current in the forward bias is more than the current in the reverse bias for a $$p-n$$ junction diode.

In the light of the above statements, choose the correct answer from the options given below :

An n.p.n transistor with current gain $$\beta=100$$ in common emitter configuration is shown in figure. The output voltage of the amplifier will be