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PREVIOUS
1
AIEEE 2002
MCQ (Single Correct Answer)
+4
-1
Change Language
The energy band gap is maximum in
A
metals
B
superconductors
C
insulator
D
semiconductor
2
AIEEE 2002
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
Change Language
The part of a transistor which is most heavily doped to produce large number of majority carriers is
A
emmiter
B
base
C
collector
D
can be any of the above three
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