When $$p$$-$$n$$ junction diode is forward biased then

When $$npn$$ transistor is used as an amplifer

For a transistor amplifier in common emitter configuration for load impedance of $$1k\,\Omega $$ $$\left( {{h_{fe}} = 50} \right.$$ and $$\left. {{h_{oe}} = 25} \right)$$ the current gain is

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the