1
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
When $$p$$-$$n$$ junction diode is forward biased then
A
both the depletion region and barrier height are reduced
B
the depletion region is widened and barrier height is reduced
C
the depletion region is reduced and barrier height is increased
D
both the depletion region and barrier height are increased
2
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
A strip of copper and another of germanium are cooled from room temperature to $$80K.$$ The resistance of
A
each of these decreases
B
copper strip increases and that of germanium decreases
C
copper strip decreases and that of germanium increases
D
each of these increases
3
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
A
crystal structure
B
variation of the number of charge carries with temperature
C
type of bonding
D
variation of scattering mechanism with temperature
4
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
In the middle of the depletion layer of a reverse- biased $$p$$-$$n$$ junction, the
A
electric field is zero
B
potential is maximum
C
electric field is maximum
D
potential is zero
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