1
AIEEE 2005
MCQ (Single Correct Answer)
+4
-1
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $$2480$$ $$nm$$ is incident on it. The band gap in $$(eV)$$ for the semiconductor is
A
$$2.5$$ $$eV$$
B
$$1.1$$ $$eV$$
C
$$0.7$$ $$eV$$
D
$$0.5$$ $$eV$$
2
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
When $$npn$$ transistor is used as an amplifer
A
electrons move from collector to base
B
holes move from emitter to base
C
electrons move from base to collector
D
holes move from base to emitter
3
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
When $$p$$-$$n$$ junction diode is forward biased then
A
both the depletion region and barrier height are reduced
B
the depletion region is widened and barrier height is reduced
C
the depletion region is reduced and barrier height is increased
D
both the depletion region and barrier height are increased
4
AIEEE 2004
MCQ (Single Correct Answer)
+4
-1
The manifestation of band structure in solids is due to
A
Bohr's correspondence principle
B
Pauli's exclusion principle
C
Heisenberg's uncertainty principle
D
Boltzmann's law

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