1
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
A
crystal structure
B
variation of the number of charge carries with temperature
C
type of bonding
D
variation of scattering mechanism with temperature
2
AIEEE 2003
MCQ (Single Correct Answer)
+4
-1
In the middle of the depletion layer of a reverse- biased $$p$$-$$n$$ junction, the
A
electric field is zero
B
potential is maximum
C
electric field is maximum
D
potential is zero
3
AIEEE 2002
MCQ (Single Correct Answer)
+4
-1
Change Language
At absolute zero, Si acts as
A
non-metal
B
metal
C
insulator
D
none of these
4
AIEEE 2002
MCQ (Single Correct Answer)
+4
-1
Change Language
By increasing the temperature, the specific resistance of a conductor and a semiconductor
A
increases for both
B
decreases for both
C
increases, decreases
D
decreases, increases
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