Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 10¹⁹ m^$$-$$3 and their mobility is 1.6 m²/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to :

A bar magnet is demagnetized by inserting it inside a solenoid of length 0.2 m, 100 turns, and carrying a current of 5.2 A. The corecivity of the bar magnet is :

Drift speed of electrons, when 1.5 A of current flows in a copper wire of cross section 5 mm², is $$\upsilon $$. If the electron density in copper is 9 $$ \times $$ 10²⁸/m³ the value of $$\upsilon $$. in mm/s is close to (Take charge of electron to be = 1.6 $$ \times $$ 10^$$-$$19C)

A parallel plate capacitor is made of two square plates of side 'a', separated by a distance d (d < < a). The lower triangular portion is filled with a dielectric of dielectric constant K, as shown in the figure. Capacitance of this capacitor is :