The slope of the I_D vs. V_GS curve of an n-channel MOSFET in linear region is 10^-3$${\Omega ^{ - 1}}$$ at V_DS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V _GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.

For the MOSFET M₁ shown in the figure, assume W/L =2, V_DD = 2.0 V, $$\mu n$$ C_OX = 100$$\mu {\rm A}/{V^2}$$ and V_TH =0.5 V. The transistor M₁ switches from saturation region to linear regionm when V_in(in Volts) is _____

For the n-channel MOS transistor shown in the figure, the threshold voltage V_Th is 0.8V. Neglect channel length modulation effects. When the drain voltage V_D = 1.6 V, the drain current I_D was found to be 0.5 mA.

For the MOSFETs shown in the figure, the threshold voltage |V_t| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of I_D (in mA) is _______