1
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.
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2
GATE ECE 2014 Set 3
Numerical
+2
-0
For the MOSFET M1 shown in the figure, assume W/L =2, VDD = 2.0 V, $$\mu n$$ COX = 100$$\mu {\rm A}/{V^2}$$ and VTH =0.5 V. The transistor M1 switches from saturation region to linear regionm when Vin(in Volts) is _____ GATE ECE 2014 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 16 English
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3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+2
-0.6
For the n-channel MOS transistor shown in the figure, the threshold voltage VTh is 0.8V. Neglect channel length modulation effects. When the drain voltage VD = 1.6 V, the drain current ID was found to be 0.5 mA. GATE ECE 2014 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 20 English
A
0.625
B
0.75
C
1.125
D
1.5
4
GATE ECE 2014 Set 2
Numerical
+2
-0
For the MOSFETs shown in the figure, the threshold voltage |Vt| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of ID (in mA) is _______ GATE ECE 2014 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 19 English
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