The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is

For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. V_SB > 0), the threshold voltage V_T of the MOSFET will

When the gate-to-source voltage (V_GS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied V_GS of 1400 mV is