1
GATE ECE 2004
MCQ (Single Correct Answer)
+2
-0.6
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS. The
threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID) is 1 mA for VGS =
2 V, then for VGS = 3 V, ID is
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of
400 mV, working in saturation is 900 mV, the drain current is observed to be 1
mA. Neglecting the channel width modulation effect and assuming that the
MOSFET is operating at saturation, the drain current for an applied VGS of 1400
mV is
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain
diffusion, then the order in which they are carried out in a standard n-well CMOS
fabrication process, is
4
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a
higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of
the MOSFET will
GATE ECE Subjects
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Control Systems
Engineering Mathematics
Analog Circuits
Network Theory
Electromagnetics
Electronic Devices and VLSI
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
General Aptitude