Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of $10^{-8}$ C/cm² at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is $8.85 × 10^{-14}$ F/cm. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

The band diagram of $p$-type semiconductor with a bandgap of the 1 eV is shown. Using this semiconductor, a MOS capacitor having $V_{T H}$ of $-0.16 \mathrm{~V}, C_{o x}^{\prime}$ of $100 \mathrm{nF} / \mathrm{cm}^2$ and metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is $V_{T H}$, the magnitude of depletion charge per unit area (in $\mathrm{C} / \mathrm{cm}^2$ ) is