GATE ECE 2024 | IC Basics and MOSFET Question 1 | Electronic Devices and VLSI

GATE ECE 2024

Numerical

-1.33

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of $10^{-8}$ C/cm² at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is $8.85 × 10^{-14}$ F/cm. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.

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GATE ECE 2023

Numerical

-0.67

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 3 English

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GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

-0.6

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, but the gate overdrive voltage (V_GS - V_TH) of T2 is double that of T1, where V_GS and V_TH are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are I_D1 and g_m1 respectively ; the corresponding values of these two parameters for T2 are

8I_D1 and 2g_m1

8I_D1 and 4g_m1

4I_D1 and 4g_m1

4I_D1 and 2g_m1

GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

-0.6

Assuming that transistor M₁ and M₂ are identical and have a threshold voltage of 1V, the state of transistors M₁ and M₂ are respectively GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 5 English