1
GATE ECE 2024
Numerical
+2
-1.33

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of $10^{-8}$ C/cm2 at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is $8.85 × 10^{-14}$ F/cm. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.

2
GATE ECE 2023
Numerical
+2
-0.67

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

3
GATE ECE 2017 Set 1
Numerical
+2
-0
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage Vtn = 1 V and its trans-conductance parameter $${\mu _n}{C_{ox}}\left( {{W \over L}} \right) = 1m{\rm A}/{V^2}.$$ Neglect channel length modulation and body bias effects. Under these conditions the drain current ID in mA is______.
4
GATE ECE 2017 Set 2
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively
A
Saturation, Saturation
B
Linear, Linear
C
Linear, Saturation
D
Saturation, Linear
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