1
GATE ECE 2023
Numerical
+2
-0
In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).
Your input ____
2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, but the gate overdrive voltage (VGS - VTH) of T2 is double that of T1, where VGS and VTH are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively ; the corresponding values of these two parameters for T2 are
3
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively
4
GATE ECE 2017 Set 2
Numerical
+2
-0
A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV
and electron affinity of Si is 4.0 eV, Ec - EF = 0.9 eV; where Ec and EF are conduction band minimum and the Fermi energy levels of Si, respectively. Oxide$${\varepsilon _r} = \,\,3.9,\,\,\,{\varepsilon _{0\,\,}}=\,8.85 \times {10^{ - 14}}$$ F/cm, oxide thickness $${t_{ox}} = 0.1\,\mu m$$
and electronic charge q = $$1.6 \times {10^{ - 19}}$$ C. If the measured flat band
voltage of the capacitor is –1V, then the magnitude of the fixed charge at the oxide semiconductor
interface, in nC/cm2, is __________.
Your input ____
Questions Asked from IC Basics and MOSFET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (1)
GATE ECE 2023 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2016 Set 3 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2015 Set 3 (2)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 1 (2)
GATE ECE 2014 Set 1 (1)
GATE ECE 2014 Set 3 (3)
GATE ECE 2014 Set 2 (2)
GATE ECE 2013 (1)
GATE ECE 2012 (4)
GATE ECE 2009 (2)
GATE ECE 2008 (3)
GATE ECE 2007 (1)
GATE ECE 2006 (1)
GATE ECE 2004 (1)
GATE ECE 2003 (3)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics