Semiconductor Physics · Electronic Devices and VLSI · GATE ECE
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GATE ECE 2024
For non-degenerately doped n-type silicon, which one of the following plots represents the temperature ($T$) dependence of free electron concentration...
GATE ECE 2024
The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three...
GATE ECE 2023
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as
GATE ECE 2023
For an intrinsic semiconductor at temperature $$T=0K$$, which of the following statement is true?
GATE ECE 2022
Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 1017 cm$$-$$3 and the intrinsic carrier concen...
GATE ECE 2022
In a non-degenerate bulk semiconductor with electron density n = 1016 cm$$-$$3, the value of EC $$-$$ EFn = 200 meV, where EC and EFn denote the botto...
GATE ECE 2017 Set 1
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy
Gallium and Arsenic sites in the GaAs crystal. Which one of ...
GATE ECE 2016 Set 1
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the
following statements is true for the energy band diag...
GATE ECE 2015 Set 2
A piece of silicon is doped uniformly with phosphorous with a doping concentration of
$$10^{16}/cm^2$$. The expected value of mobility versus doping c...
GATE ECE 2015 Set 2
An n–type silicon sample is uniformly illuminated with light which generates 1020
electron hole pairs per cm3
per second. The minority carrier lifetim...
GATE ECE 2015 Set 1
A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample...
GATE ECE 2014 Set 4
In the figure ln(ρi) is plotted as a function of 1/T, where ρi
the intrinsic resistivity of silicon,
T is is the temperature, and the plot is almost l...
GATE ECE 2014 Set 4
The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a
semiconductor material of bandgap Eg= 1.1 eV is ________.
...
GATE ECE 2014 Set 3
A thin P-type silicon sample is uniformly illuminated with light which generates excess
carriers. The recombination rate is directly proportional to
GATE ECE 2014 Set 3
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is_...
GATE ECE 2011
Drift current in the semiconductors depends upon
GATE ECE 2008
Which of the following is true?
GATE ECE 2006
Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
GATE ECE 2006
The concentration of minority carriers in an extrinsic semiconductor under
equilibrium is:
GATE ECE 2005
The primary reason for the widespread use of Silicon in semiconductor device
technology is
GATE ECE 2005
A Silicon PN junction at a temperature of 20°C has a reverse saturation current of
10 pico-Amperes (pA). The reverse saturation current at 40°C for th...
GATE ECE 2005
The band gap of Silicon at room temperature is:
GATE ECE 2004
The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
GATE ECE 2003
n-type silicon is obtained by doping silicon with
GATE ECE 2002
The intrinsic carrier concentration of silicon sample at 300oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\ti...
GATE ECE 2002
The band gap of silicon at 300 K is
GATE ECE 1997
The units of $$\frac q{KT}$$ are
GATE ECE 1995
The probability that an electron in a metal occupies the Fermi-level at any
temperature (> 0 K)
GATE ECE 1995
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$.
If the
intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ ...
GATE ECE 1995
The drift velocity of electrons in silicon
GATE ECE 1994
A p-type silicon sample has a higher conductivity compared to an n-type sample
having the same dopant concentration.
GATE ECE 1994
A small concentration of minority carries is injected into a homogeneous
semiconductor crystal at one point. An electric field of 10 V/cm is appl...
Marks 2
GATE ECE 2024
A non-degenerate n-type semiconductor has 5 % neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band ($E_C$) and the do...
GATE ECE 2023
In an extrinsic semiconductor, the hole concentration is given to be 1.5$$n_i$$ where $$n_i$$ is the intrinsic carrier concentration of 1 $$\times$$ 1...
GATE ECE 2023
In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T =...
GATE ECE 2022
Select the CORRECT statements regarding semiconductor devices
GATE ECE 2017 Set 1
The dependence of drift velocity of electrons on electric field in a semiconductor is shown
below. The semiconductor has a uniform electron concentrat...
GATE ECE 2015 Set 2
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section
and a length of 1cm as shown in figure. The donor dopin...
GATE ECE 2014 Set 4
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the
intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is ...
GATE ECE 2014 Set 4
An N-type semiconductor having uniform doping is biased as shown in the figure.
If EC is the lowest energy level of the conduction band, EV is the h...
GATE ECE 2014 Set 2
Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000
cm2/V-s. If the concentration gradient of electrons injected in...
GATE ECE 2010
The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T=300K, electronic charge...
GATE ECE 2010
The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T=300K, electronic charge...
GATE ECE 2005
A silicon sample 'A' is doped with 1018 atoms/cm3 of Boron. Another sample 'B' of
identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The...
GATE ECE 2003
An n-type silicon bar 0.1 cm long and $$100\;\mu m^2$$ in cross-sectional area has a majority
carrier concentration of $$5\times10^{20}/m^3$$ and the ...
GATE ECE 2003
The electron concentration in a sample of uniformly doped n-type silicon at 300oK varies linearly from $$10^{17}/cm^3$$ at x = 0 to $$6\times10^{16}/c...
GATE ECE 1992
A semiconductor is irradiated with light such that carriers are uniformly
generated throughout its volume. The semiconductor is n-type with $$N_D=10^{...
GATE ECE 1991
A silicon sample is uniformly doped with 1016 phosphorous atoms/cm3 and 2 ×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is...
GATE ECE 1987
In an intrinsic semiconductor the free electron concentration depends on