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GATE ECE 2015 Set 1
Numerical
+2
-0
A MOSFET in saturation has a drain current of 1 mA for VDS =0.5V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in k$$\Omega $$) of the MOSFET is______
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2
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+2
-0.6
For the NMOSFET in the circuit shown, in the threshold voltage is Vth, where Vth>0. The source voltage Vss is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of Vss is represented by GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English
A
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 1
B
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 2
C
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 3
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GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 4
3
GATE ECE 2014 Set 1
Numerical
+2
-0
A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage VTH = -0.5 V, VGS = 2.0 V, VDS = 5 V, W/L=100, COX=10-8 F/cm2 and $${\mu _n}$$ = 800 cm2/V-s. The value of the resistance of the voltage controlled resistor (in $$\Omega $$ ) is _____.
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4
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.
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