1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400 mV is
A
0.5 mA
B
2.0 mA
C
3.5 mA
D
4.0 mA
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
A
P-Q-R-S
B
Q-S-R-P
C
R-P-S-Q
D
S-R-Q-P
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