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GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400 mV is
A
0.5 mA
B
2.0 mA
C
3.5 mA
D
4.0 mA
GATE ECE Subjects
EXAM MAP