BJT and FET · Electronic Devices and VLSI · GATE ECE

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Marks 1

GATE ECE 2022
An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2V. The corresponding inve...
GATE ECE 2017 Set 1
For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$ for emitter, $$\bigtriangleup p_B$$ for base, $$\bigtrian...
GATE ECE 2017 Set 2
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
GATE ECE 2017 Set 2
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transis...
GATE ECE 2016 Set 2
The Ebers-Moll model of a BJT is valid
GATE ECE 2016 Set 3
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The solar cell has an area of 3 c...
GATE ECE 2015 Set 3
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(...
GATE ECE 2015 Set 3
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
GATE ECE 2014 Set 2
An increase in the base recombination of a BJT will increase
GATE ECE 2011
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current ICO = 0.6μA. This BJT is conn...
GATE ECE 2002
If the transistor in Figure is in saturation, then ...
GATE ECE 2001
MOSFET can be used as a
GATE ECE 1995
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
GATE ECE 1995
A BJT is said to be operating in the saturation region if
GATE ECE 1995
The Early-Effect in a bipolar junction transistor is caused by
GATE ECE 1995
The Ebers-Moll model is applicable to
GATE ECE 1994
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
GATE ECE 1994
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.

Marks 2

GATE ECE 2016 Set 3
The injected excess electron concentration profile in the base region of an npn BJT, biased in the active region, is linear, as shown in the figure. I...
GATE ECE 2015 Set 3
An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with VBE = 700 mV. The thermal voltage (VT...
GATE ECE 2014 Set 4
Consider two BJT's biased at the same collector current with area A1 = 0.2 μm × 0.2 μm and A2 = 300 μm × 300 μm. Assuming that all other device parame...
GATE ECE 2011
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of 10 μm is available for conduct...
GATE ECE 2011
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of 10 μm is available for conduct...
GATE ECE 2010
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection e...
GATE ECE 2007
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:
GATE ECE 1999
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in mA/V) for an applied gate-to-source voltage VGS of –2V is:...
GATE ECE 1992
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base jun...
GATE ECE 1992
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for...
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