## Marks 1

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An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collecto...
GATE ECE 2017 Set 2
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(... GATE ECE 2017 Set 2 For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$for emitter,$$\bigtriangle...
GATE ECE 2017 Set 1
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The...
GATE ECE 2016 Set 3
The Ebers-Moll model of a BJT is valid
GATE ECE 2016 Set 2
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the ...
GATE ECE 2015 Set 3
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
GATE ECE 2015 Set 3
An increase in the base recombination of a BJT will increase
GATE ECE 2014 Set 2
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current...
GATE ECE 2011
If the transistor in Figure is in saturation, then ...
GATE ECE 2002
MOSFET can be used as a
GATE ECE 2001
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then ...
GATE ECE 1995
A BJT is said to be operating in the saturation region if
GATE ECE 1995
The Ebers-Moll model is applicable to
GATE ECE 1995
The Early-Effect in a bipolar junction transistor is caused by
GATE ECE 1995
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.
GATE ECE 1994
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
GATE ECE 1994

## Marks 2

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The injected excess electron concentration profile in the base region of an npn BJT, biased in the active region, is lin...
GATE ECE 2016 Set 3
An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with VBE = 7...
GATE ECE 2015 Set 3
Consider two BJT's biased at the same collector current with area A1 = 0.2 μm × 0.2 μm and A2 = 300 μm × 300 μm. Assumin...
GATE ECE 2014 Set 4
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of ...
GATE ECE 2011
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of ...
GATE ECE 2011
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respective...
GATE ECE 2010
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transp...
GATE ECE 2007
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in mA/V) for an applied gate-to-source voltag...
GATE ECE 1999
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias...
GATE ECE 1992
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is ach...
GATE ECE 1992

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