# PN Junction · Electronic Devices and VLSI · GATE ECE

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## Marks 1

GATE ECE 2022
A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density...
GATE ECE 2015 Set 1
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
GATE ECE 2015 Set 1
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is ________. ...
GATE ECE 2014 Set 1
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
GATE ECE 2013
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
GATE ECE 2008
Which of the following is NOT associated with a P-N junction?
GATE ECE 2008
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop...
GATE ECE 2007
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
GATE ECE 2002
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the tem...
GATE ECE 1998
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
GATE ECE 1998
For small signal a.c. operation, a practical forward biased diode can be modeled as
GATE ECE 1995
The diffusion potential across a P-N junction
GATE ECE 1995
A zener diode works on the principle of
GATE ECE 1995
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, VR , as
GATE ECE 1990
In a junction diode

## Marks 2

GATE ECE 2017 Set 2
For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit vol...
GATE ECE 2016 Set 2
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. Th...
GATE ECE 2016 Set 3
Consider the charge profile shown in the figure. The resultant potential distribution is best described by ...
GATE ECE 2015 Set 3
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is N...
GATE ECE 2015 Set 1
The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (CJ) at a reverse bias (VR) of 1.25V is 5pF, the value of CJ (i...
GATE ECE 2014 Set 2
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 µm and the permi...
GATE ECE 2013
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across RL, the minimum value of RL in Ω and the minimum...
GATE ECE 2009
In the circuit below, the diode is ideal. The voltage V is given by ...
GATE ECE 2007
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the deple...
GATE ECE 2005
The Zener diode in the regulator circuit shown in figure has a Zener voltage of 5.8 Volts and a Zener knee current of 0.5 mA. The maximum load current...
GATE ECE 2005
A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivi...
GATE ECE 2003
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forw...
GATE ECE 2003
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias ...
GATE ECE 1993
The built-in potential (Diffusion Potential) in a p-n junction
GATE ECE 1992
The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does n...
GATE ECE 1991
The small signal capacitances of an abrupt P+−N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the capacitance at a reverse bias vo...
GATE ECE 1991
Referring to the figure. The switch S is in position 1 initially and steady state conditions exist from time t = 0 to t = t0. At t = t0, the switch is...
GATE ECE 1987
The diffusion capacitance of a P-N junction
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