## Marks 1

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A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction...
GATE ECE 2015 Set 1
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is __...
GATE ECE 2015 Set 1
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in ...
GATE ECE 2014 Set 1
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
GATE ECE 2013
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ appli...
GATE ECE 2008
Which of the following is NOT associated with a P-N junction?
GATE ECE 2008
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
GATE ECE 2007
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is ...
GATE ECE 2002
For small signal a.c. operation, a practical forward biased diode can be modeled as
GATE ECE 1998
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
GATE ECE 1998
The diffusion potential across a P-N junction
GATE ECE 1995
A zener diode works on the principle of
GATE ECE 1995
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, V...
GATE ECE 1995
In a junction diode
GATE ECE 1990

## Marks 2

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For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 m...
GATE ECE 2017 Set 2
Consider the charge profile shown in the figure. The resultant potential distribution is best described by ...
GATE ECE 2016 Set 3
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of {\mathrm N}_\mathrm d^+=1...
GATE ECE 2016 Set 2
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of...
GATE ECE 2015 Set 3
The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (CJ) at a reverse bias (VR) of 1....
GATE ECE 2015 Set 1
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the ju...
GATE ECE 2014 Set 2
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across RL, the minimum va...
GATE ECE 2013
In the circuit below, the diode is ideal. The voltage V is given by ...
GATE ECE 2009
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a re...
GATE ECE 2007
The Zener diode in the regulator circuit shown in figure has a Zener voltage of 5.8 Volts and a Zener knee current of 0....
GATE ECE 2005
A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon...
GATE ECE 2005
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain...
GATE ECE 2003
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are ...
GATE ECE 2003
The built-in potential (Diffusion Potential) in a p-n junction
GATE ECE 1993
The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so tha...
GATE ECE 1992
The small signal capacitances of an abrupt P+−N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the ca...
GATE ECE 1991
Referring to the figure. The switch S is in position 1 initially and steady state conditions exist from time t = 0 to t ...
GATE ECE 1991
The diffusion capacitance of a P-N junction
GATE ECE 1987

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