1
GATE ECE 2026
MCQ (More than One Correct Answer)
+1
-0.33
Figure shows the output characteristics of two different Bipolar Junction
Transistors (BJT), BJT 1 with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT 2 with magnitude of Early voltage $\left|V_{A 2}\right|$.
Which of the following options is/are correct regarding the Early voltages?

2
GATE ECE 2022
Numerical
+1
-0
An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2V. The corresponding inversion charge density (QIN) is 2.2 $$\mu$$C/cm2. Assume oxide capacitance per unit area as Cox = 1.7 $$\mu$$F/cm2. For VG = 4V, the value of QIN is __________ $$\mu$$C/cm2 (rounded off to one decimal place).

Your input ____
3
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity.
The value of the collector-to–emitter voltage VCE (in volt) is _______.
The value of the collector-to–emitter voltage VCE (in volt) is _______.Your input ____
4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias
across the base-collector junction is increased, then
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