GATE ECE 2026 | BJT and FET Question 1 | Electronic Devices and VLSI

GATE ECE 2026

MCQ (More than One Correct Answer)

-0.33

Figure shows the output characteristics of two different Bipolar Junction

Transistors (BJT), BJT 1 with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT 2 with magnitude of Early voltage $\left|V_{A 2}\right|$.

Which of the following options is/are correct regarding the Early voltages?

GATE ECE 2026 Electronic Devices and VLSI - BJT and FET Question 1 English

$\left|V_{A 1}\right|>\left|V_{A 2}\right|$

$\left|V_{A 1}\right|$ is infintely large

$\left|V_{A 1}\right|<\left|V_{A 2}\right|$

$\left|V_{A 2}\right|$ is infinte

GATE ECE 2022

Numerical

-0

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with V_G = 2V. The corresponding inversion charge density (Q_IN) is 2.2 $$\mu$$C/cm². Assume oxide capacitance per unit area as C_ox = 1.7 $$\mu$$F/cm². For V_G = 4V, the value of Q_IN is __________ $$\mu$$C/cm² (rounded off to one decimal place).

GATE ECE 2022 Electronic Devices and VLSI - BJT and FET Question 2 English

Your input ____

GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

-0.3

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

the effective base width increases and common – emitter current gain increases

the effective base width increases and common – emitter current gain decreases

the effective base width decreases and common – emitter current gain increases

the effective base width decreases and common – emitter current gain decreases

GATE ECE 2017 Set 2

Numerical

-0

Consider the circuit shown in the figure. Assume base-to-emitter voltage V_BE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. GATE ECE 2017 Set 2 Electronic Devices and VLSI - BJT and FET Question 13 English