Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V^-1, In the saturation region, the drain conductance (in micro siemens) is__________.

A MOSFET in saturation has a drain current of 1 mA for V_DS =0.5V. If the channel length modulation coefficient is 0.05 V^-1, the output resistance (in k$$\Omega $$) of the MOSFET is______

For the NMOSFET in the circuit shown, in the threshold voltage is V_th, where V_th>0. The source voltage V_ss is varied from 0 to V_DD. Neglecting the channel length modulation, the drain current I_D as a function of V_ss is represented by

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: k_n = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; V_TN = 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage V_DD (in volts) needed to ensure that transistor M₁ operates in saturation mode of operation is _____