1
GATE ECE 2009
MCQ (Single Correct Answer)
+2
-0.6
Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV-2. GATE ECE 2009 Electronic Devices and VLSI - IC Basics and MOSFET Question 28 English
Estimate the output voltage V0 for VG =1.5 V. [Hints: Use the appropriate current-voltage equation for each MOSFET, based on the answer]
A
$$\left(4-\frac1{\sqrt2}\right)V$$
B
$$\left(4+\frac1{\sqrt2}\right)V$$
C
$$\left(4-\frac{\sqrt3}2\right)V$$
D
$$\left(4+\frac{\sqrt3}2\right)V$$
2
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias is chosen so that both transistors are in saturation. The equivalent gm of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant Vout. The equivalent gm of the pair is GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English
A
The sum of individual gm’s of the transistors
B
The product of individual gm’s of the transistors
C
Nearly equal to the gm of M1
D
Nearly equal to gm/g0 of M2
3
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 31 English The current Ix is related to Ibias as
A
$$I_x\;=I_{bias}\;+\;I_s$$
B
$$I_x\;=I_{bias}\;$$
C
$$I_x\;=I_{bias}\;-\;I_s$$
D
$$I_x\;=I_{bias}\;\left(V_{DD}\;-\frac{V_{out}}{R_E}\right)$$
4
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. Which of the following figures represents the expected dependence of gm on VG?
A
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 30 English Option 1
B
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 30 English Option 2
C
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 30 English Option 3
D
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 30 English Option 4
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