1
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

For a MOS capacitor, $$\mathrm{V_{fb}}$$ and $$\mathrm{V_{t}}$$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($$\mathrm{W_{dep}}$$) for varying gate voltage ($$\mathrm{V_{g}}$$) is best represented by

A
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 1
B
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 2
C
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 3
D
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 4
2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
For the circuit shown in the figure, P and Q are the inputs and Y is the output. GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 43 English The logic implemented by the circuit is
A
XNOR
B
XOR
C
NOR
D
OR
3
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage VGS=0.7 V, drain-to source voltage VDS=0.1V, $$\left(\mu_nC_{ox}\right)\;=\;100\;\mu A/V^2$$, threshold voltage VTH=0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.
Your input ____
4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH), where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
A
voltage source with zero output impedance
B
voltage source with non-zero output impedance
C
current source with finite output impedance
D
current source with infinite output impedance
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