1
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The source of a silicon (ni = 1010 per cm3) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
A
107
B
100
C
10
D
0
2
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 27 English

The gate-source overlap capacitance is approximately

A
0.7 fF
B
0.7 pF
C
0.35 fF
D
0.24 pF
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the CMOS circuit shown, electron and hole mobilities are equal, and M1 and M2 are equally sized. The device M1 is in the linear region if GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 29 English
A
V in < 1.875 V
B
1.875 V < V in < 3.125 V
C
V in > 3.125 V
D
0 < V in < 5 V
4
GATE ECE 2009
MCQ (Single Correct Answer)
+2
-0.6
Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV-2. GATE ECE 2009 Electronic Devices and VLSI - IC Basics and MOSFET Question 30 English
Estimate the output voltage V0 for VG =1.5 V. [Hints: Use the appropriate current-voltage equation for each MOSFET, based on the answer]
A
$$\left(4-\frac1{\sqrt2}\right)V$$
B
$$\left(4+\frac1{\sqrt2}\right)V$$
C
$$\left(4-\frac{\sqrt3}2\right)V$$
D
$$\left(4+\frac{\sqrt3}2\right)V$$
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