1
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The source of a silicon (ni = 1010 per cm3) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
A
107
B
100
C
10
D
0
2
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 25 English

The source-body junction capacitance is approximately

A
2 fF
B
7 fF
C
2 pF
D
7 pF
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the CMOS circuit shown, electron and hole mobilities are equal, and M1 and M2 are equally sized. The device M1 is in the linear region if GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 26 English
A
V in < 1.875 V
B
1.875 V < V in < 3.125 V
C
V in > 3.125 V
D
0 < V in < 5 V
4
GATE ECE 2009
MCQ (Single Correct Answer)
+2
-0.6
Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV-2. GATE ECE 2009 Electronic Devices and VLSI - IC Basics and MOSFET Question 28 English
For small increase in VG beyond 1 V, which of the following gives the correct description of the region of operation of each MOSFET?
A
Both the MOSFETs are in saturation region
B
Both the MOSFETs are in triode region
C
n-MOSFET is triode and p-MOSFET is in saturation region
D
n-MOSFET is in saturation and p-MOSFET is in triode region
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