1
GATE ECE 2015 Set 2
Numerical
+2
-0
In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________
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2
GATE ECE 2015 Set 1
Numerical
+2
-0
A MOSFET in saturation has a drain current of 1 mA for VDS =0.5V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in k$$\Omega $$) of the MOSFET is______
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3
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+2
-0.6
For the NMOSFET in the circuit shown, in the threshold voltage is Vth, where Vth>0. The source voltage Vss is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of Vss is represented by GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English
A
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 1
B
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 2
C
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 3
D
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 4
4
GATE ECE 2014 Set 3
Numerical
+2
-0
An ideal MOS capacitor has boron doping concentration of 1015 cm-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given that $${\varepsilon _0} = 80854 \times {10^{ - 14}}F/cm$$ and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/ $$\mu m$$ ) in the oxide region is ______
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