1
GATE ECE 2015 Set 2
Numerical
+2
-0
In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________
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2
GATE ECE 2015 Set 3
Numerical
+2
-0
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: kn = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; VTN = 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage VDD (in volts) needed to ensure that transistor M1 operates in saturation mode of operation is _____
![GATE ECE 2015 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 16 English](https://gateclass.cdn.examgoal.net/examside/questions/9565522b31fada0a6e89538753c5be98a4bff9918545a827ca0d87c7cc8b2262.jpg)
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3
GATE ECE 2015 Set 3
Numerical
+2
-0
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda $$ (in V-1) is _______
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4
GATE ECE 2015 Set 1
Numerical
+2
-0
A MOSFET in saturation has a drain current of 1 mA for VDS =0.5V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in k$$\Omega $$) of the MOSFET is______
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Questions Asked from IC Basics and MOSFET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (1)
GATE ECE 2023 (1)
GATE ECE 2017 Set 1 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (3)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 3 (2)
GATE ECE 2015 Set 1 (2)
GATE ECE 2014 Set 3 (3)
GATE ECE 2014 Set 2 (2)
GATE ECE 2014 Set 1 (1)
GATE ECE 2013 (1)
GATE ECE 2012 (4)
GATE ECE 2009 (2)
GATE ECE 2008 (3)
GATE ECE 2007 (1)
GATE ECE 2006 (1)
GATE ECE 2004 (1)
GATE ECE 2003 (3)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics