1

GATE ECE 2015 Set 2

Numerical

+2

-0

In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________

Your input ____

2

GATE ECE 2015 Set 3

Numerical

+2

-0

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: k

_{n}= $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; V_{TN}= 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage V_{DD}(in volts) needed to ensure that transistor M_{1}operates in saturation mode of operation is _____Your input ____

3

GATE ECE 2015 Set 3

Numerical

+2

-0

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda $$ (in V

^{-1}) is _______Your input ____

4

GATE ECE 2015 Set 1

Numerical

+2

-0

A MOSFET in saturation has a drain current of 1 mA for V

_{DS}=0.5V. If the channel length modulation coefficient is 0.05 V^{-1}, the output resistance (in k$$\Omega $$) of the MOSFET is______Your input ____

Questions Asked from IC Basics and MOSFET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2017 Set 1 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (3)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 3 (2)
GATE ECE 2015 Set 1 (2)
GATE ECE 2014 Set 3 (3)
GATE ECE 2014 Set 2 (2)
GATE ECE 2014 Set 1 (1)
GATE ECE 2013 (1)
GATE ECE 2012 (4)
GATE ECE 2009 (2)
GATE ECE 2008 (3)
GATE ECE 2007 (1)
GATE ECE 2006 (1)
GATE ECE 2004 (1)
GATE ECE 2003 (3)

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics