Semiconductor Memories · Digital Circuits · GATE ECE

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Marks 1

GATE ECE 2017 Set 2
In a DRAM,
GATE ECE 2015 Set 1
A 16 Kb (=16,384 bit) memory array is designed as a square with an aspect ratio of one (number of rows is equal to the number of columns). The minimu...
GATE ECE 1996
Each cell of a static Random Access Memory Contains
GATE ECE 1995
The minimum number of MOS transistors required to make a dynamic RAM cell is
GATE ECE 1994
A PLA can be used
GATE ECE 1994
A dynamic RAM consists of
GATE ECE 1992
Choose the correct satatement(s) from the following:

Marks 2

GATE ECE 2018
A 2 $$ \times $$ 2 ROM array is built with the help of diodes as shown in the circuit below. Here W0 and W1 are signals that select the word lines and...
GATE ECE 2014 Set 3
If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in
GATE ECE 2003
In the circuit shown in Figure, A is a parallel in, parallel-out 4-bit register, which loads at the rising edge of the clock C. The input lines are c...
GATE ECE 2002
If the input X$$_3$$, X$$_2$$, X$$_1$$, X$$_0$$ to the ROM in figure 2.12 are 8-4-2-1 BCD numbers, then the outpus are Y$$_3$$,Y$$_2$$, Y$$_1$$, Y$$_...
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