1
GATE ECE 2014 Set 3
Numerical
+2
-0
For the MOSFET M1 shown in the figure, assume W/L =2, VDD = 2.0 V, $$\mu n$$ COX = 100$$\mu {\rm A}/{V^2}$$ and VTH =0.5 V. The transistor M1 switches from saturation region to linear regionm when Vin(in Volts) is _____ 2
GATE ECE 2014 Set 2
+2
-0.6
For the n-channel MOS transistor shown in the figure, the threshold voltage VTh is 0.8V. Neglect channel length modulation effects. When the drain voltage VD = 1.6 V, the drain current ID was found to be 0.5 mA. A
0.625
B
0.75
C
1.125
D
1.5
3
GATE ECE 2014 Set 2
Numerical
+2
-0
For the MOSFETs shown in the figure, the threshold voltage |Vt| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of ID (in mA) is _______ 4
GATE ECE 2014 Set 1
Numerical
+2
-0
A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage VTH = -0.5 V, VGS = 2.0 V, VDS = 5 V, W/L=100, COX=10-8 F/cm2 and $${\mu _n}$$ = 800 cm2/V-s. The value of the resistance of the voltage controlled resistor (in $$\Omega$$ ) is _____.
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics
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