For the MOSFETs shown in the figure, the threshold voltage |V_t| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of I_D (in mA) is _______

A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage V_TH = -0.5 V, V_GS = 2.0 V, V_DS = 5 V, W/L=100, C_OX=10^-8 F/cm² and $${\mu _n}$$ = 800 cm²/V-s. The value of the resistance of the voltage controlled resistor (in $$\Omega $$ ) is _____.

The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of V_B = 2V is (device data for M: device transconductance parameter

k_N = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage V_TN=1V, and neglect body effect and channel length modulation effects)

The source of a silicon (n_i = 10¹⁰ per cm³) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 10¹⁹/cm³, the number of holes in the source region with the above volume is approximately