1
GATE ECE 2017 Set 1
Numerical
+2
-0
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage Vtn = 1 V and its trans-conductance parameter $${\mu _n}{C_{ox}}\left( {{W \over L}} \right) = 1m{\rm A}/{V^2}.$$ Neglect channel length modulation and body bias effects. Under these conditions the drain current ID in mA is______.
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2
GATE ECE 2016 Set 3
Numerical
+2
-0
Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t1 = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t2 =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness teq. If the capacitors are of equal capacitance, then the value of teq (in nm) is ______
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3
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown in the figure, the channel length modulation of all transistors is non-zero $$\left( {\lambda \ne 0} \right)$$. Also all transistors operate in saturation and have negligible body effect. The ac small signal voltage gain $$\left( {{V_0}/{V_{in}}} \right)$$ of the circuit is
A
$$- {g_{m1}}\left( {{r_{01}}//{r_{02}}//{r_{03}}} \right)$$
B
$$- {g_{m1}}\left( {{r_{01}}//{1 \over {{g_{m3}}}}//{r_{03}}} \right)$$
C
$$- {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m2}}}}//\,{r_{02}}} \right)//{r_{03}}} \right)$$
D
$$- {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m3}}}}//\,{r_{03}}} \right)//{r_{02}}} \right)$$
4
GATE ECE 2016 Set 3
Numerical
+2
-0
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda$$ to be zero, the small signal input pole frequency (in kHz) is _____
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