1
GATE ECE 2007
+2
-0.6
In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
Kn = Kp = μnCOX$$\frac{W_n}{L_n}$$ = μpCOX$$\frac{W_P}{L_P}$$= 40 μA/V2 and their threshold voltages are VT = 1 V, the current I is: A
0 A
B
25 μA
C
45 μA
D
90 μA
2
GATE ECE 2006
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID − VGS curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS = - 6 Volts at ID = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?
A
VGS = -6 Volts
B
VGS = -3 Volts
C
VGS = 0 Volts
D
VGS = 3 Volts
3
GATE ECE 2004
+2
-0.6
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS. The threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID) is 1 mA for VGS = 2 V, then for VGS = 3 V, ID is
A
2 mA
B
3 mA
C
9 mA
D
4 mA
4
GATE ECE 2003
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will
A
remain unchanged
B
decrease
C
change polarity
D
increase
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics
EXAM MAP
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