In the circuit shown in the figure, transistor M1 is in saturation and has transconductance g_m = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda $$ to be zero, the small signal input pole frequency (in kHz) is _____

In the circuit shown in the figure, the channel length modulation of all transistors is non-zero $$\left( {\lambda \ne 0} \right)$$. Also all transistors operate in saturation and have negligible body effect. The ac small signal voltage gain $$\left( {{V_0}/{V_{in}}} \right)$$ of the circuit is

Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t₁ = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t₂ =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness t_eq. If the capacitors are of equal capacitance, then the value of t_eq (in nm) is ______

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: k_n = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; V_TN = 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage V_DD (in volts) needed to ensure that transistor M₁ operates in saturation mode of operation is _____