1
GATE ECE 2016 Set 3
Numerical
+2
-0
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda$$ to be zero, the small signal input pole frequency (in kHz) is _____
2
GATE ECE 2016 Set 1
Numerical
+2
-0
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain conductance (in micro siemens) is__________.
3
GATE ECE 2015 Set 2
Numerical
+2
-0
In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________
4
GATE ECE 2015 Set 3
Numerical
+2
-0
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: kn = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; VTN = 1V. Asuume that the channel length modulation parameter $$\lambda$$ is zero and body is shorted to source. The minimum supply voltage VDD (in volts) needed to ensure that transistor M1 operates in saturation mode of operation is _____