1
GATE ECE 2006
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID − VGS curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS = - 6 Volts at ID = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?
A
VGS = -6 Volts
B
VGS = -3 Volts
C
VGS = 0 Volts
D
VGS = 3 Volts
2
GATE ECE 2004
+2
-0.6
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS. The threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID) is 1 mA for VGS = 2 V, then for VGS = 3 V, ID is
A
2 mA
B
3 mA
C
9 mA
D
4 mA
3
GATE ECE 2003
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400 mV is
A
0.5 mA
B
2.0 mA
C
3.5 mA
D
4.0 mA
4
GATE ECE 2003
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will
A
remain unchanged
B
decrease
C
change polarity
D
increase
EXAM MAP
Medical
NEET