1

GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

+2

-0.6

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, but the gate overdrive voltage (V

_{GS}- V_{TH}) of T2 is double that of T1, where V_{GS}and V_{TH}are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are I_{D1}and g_{m1}respectively ; the corresponding values of these two parameters for T2 are2

GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

+2

-0.6

Assuming that transistor M

_{1}and M_{2}are identical and have a threshold voltage of 1V, the state of transistors M_{1}and M_{2}are respectively3

GATE ECE 2017 Set 2

Numerical

+2

-0

A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV
and electron affinity of Si is 4.0 eV, E

_{c}- E_{F}= 0.9 eV; where E_{c}and E_{F}are conduction band minimum and the Fermi energy levels of Si, respectively. Oxide$${\varepsilon _r} = \,\,3.9,\,\,\,{\varepsilon _{0\,\,}}=\,8.85 \times {10^{ - 14}}$$ F/cm, oxide thickness $${t_{ox}} = 0.1\,\mu m$$ and electronic charge q = $$1.6 \times {10^{ - 19}}$$ C. If the measured flat band voltage of the capacitor is –1V, then the magnitude of the fixed charge at the oxide semiconductor interface, in nC/cm^{2}, is __________.Your input ____

4

GATE ECE 2016 Set 2

Numerical

+2

-0

Consider a long-channel NMOS transistor with source and body connected together. Assume that
the electron mobility is independent of V

g

g

Where g

_{GS}and V_{DS}. Given,g

_{m}= 0.5$$\mu {\rm A}/V$$ for V_{DS}= 50 m V and V_{GS}= 2V,g

_{d}= $$8\mu {\rm A}/V$$ for V_{GS}= 2 V and V_{DS}= 0 V,Where g

_{m}=$${{\partial {{\rm I}_D}} \over {\partial {V_{GS}}}}\,\,and\,\,{g_d}\,\, = \,{{\partial {{\rm I}_D}} \over {\partial {V_{DS}}}}$$The threshold voltage (in volts) of the transistor is

Your input ____

Questions Asked from IC Basics and MOSFET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2017 Set 1 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (3)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 3 (2)
GATE ECE 2015 Set 1 (2)
GATE ECE 2014 Set 3 (3)
GATE ECE 2014 Set 2 (2)
GATE ECE 2014 Set 1 (1)
GATE ECE 2013 (1)
GATE ECE 2012 (4)
GATE ECE 2009 (2)
GATE ECE 2008 (3)
GATE ECE 2007 (1)
GATE ECE 2006 (1)
GATE ECE 2004 (1)
GATE ECE 2003 (3)

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics