1
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of VB = 2V is (device data for M: device transconductance parameter

kN = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage VTN=1V, and neglect body effect and channel length modulation effects)

GATE ECE 2013 Electronic Devices and VLSI - IC Basics and MOSFET Question 22 English
A
12.5
B
25
C
50
D
100
2
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The source of a silicon (ni = 1010 per cm3) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
A
107
B
100
C
10
D
0
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 25 English

The source-body junction capacitance is approximately

A
2 fF
B
7 fF
C
2 pF
D
7 pF
4
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 24 English

The gate-source overlap capacitance is approximately

A
0.7 fF
B
0.7 pF
C
0.35 fF
D
0.24 pF
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