1
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 5 English
A
Saturation, Saturation
B
Linear, Linear
C
Linear, Saturation
D
Saturation, Linear
2
GATE ECE 2017 Set 2
Numerical
+2
-0
A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV, Ec - EF = 0.9 eV; where Ec and EF are conduction band minimum and the Fermi energy levels of Si, respectively. Oxide$${\varepsilon _r} = \,\,3.9,\,\,\,{\varepsilon _{0\,\,}}=\,8.85 \times {10^{ - 14}}$$ F/cm, oxide thickness $${t_{ox}} = 0.1\,\mu m$$ and electronic charge q = $$1.6 \times {10^{ - 19}}$$ C. If the measured flat band voltage of the capacitor is –1V, then the magnitude of the fixed charge at the oxide semiconductor interface, in nC/cm2, is __________.
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3
GATE ECE 2017 Set 1
Numerical
+2
-0
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage Vtn = 1 V and its trans-conductance parameter $${\mu _n}{C_{ox}}\left( {{W \over L}} \right) = 1m{\rm A}/{V^2}.$$ Neglect channel length modulation and body bias effects. Under these conditions the drain current ID in mA is______. GATE ECE 2017 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 7 English
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4
GATE ECE 2016 Set 1
Numerical
+2
-0
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain conductance (in micro siemens) is__________.
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