1
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively
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2
GATE ECE 2017 Set 2
Numerical
+2
-0
A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV
and electron affinity of Si is 4.0 eV, Ec - EF = 0.9 eV; where Ec and EF are conduction band minimum and the Fermi energy levels of Si, respectively. Oxide$${\varepsilon _r} = \,\,3.9,\,\,\,{\varepsilon _{0\,\,}}=\,8.85 \times {10^{ - 14}}$$ F/cm, oxide thickness $${t_{ox}} = 0.1\,\mu m$$
and electronic charge q = $$1.6 \times {10^{ - 19}}$$ C. If the measured flat band
voltage of the capacitor is –1V, then the magnitude of the fixed charge at the oxide semiconductor
interface, in nC/cm2, is __________.
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3
GATE ECE 2016 Set 2
Numerical
+2
-0
Consider a long-channel NMOS transistor with source and body connected together. Assume that
the electron mobility is independent of VGS and VDS. Given,
gm = 0.5$$\mu {\rm A}/V$$ for VDS = 50 m V and VGS = 2V,
gd = $$8\mu {\rm A}/V$$ for VGS = 2 V and VDS = 0 V,
Where gm =$${{\partial {{\rm I}_D}} \over {\partial {V_{GS}}}}\,\,and\,\,{g_d}\,\, = \,{{\partial {{\rm I}_D}} \over {\partial {V_{DS}}}}$$
gm = 0.5$$\mu {\rm A}/V$$ for VDS = 50 m V and VGS = 2V,
gd = $$8\mu {\rm A}/V$$ for VGS = 2 V and VDS = 0 V,
Where gm =$${{\partial {{\rm I}_D}} \over {\partial {V_{GS}}}}\,\,and\,\,{g_d}\,\, = \,{{\partial {{\rm I}_D}} \over {\partial {V_{DS}}}}$$
The threshold voltage (in volts) of the transistor is
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4
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+2
-0.6
A voltage VG is applied across a MOS capacitor with metal gate and p-type silicon substrate at
T=300 K. The inversion carrier density (in number of carriers per unit area) for VG = 0.8 V is $$2\,\, \times \,\,{10^{11}}\,\,\,\,\,\,c{m^{ - 2}}$$ . For $${V_G}\,\, = \,\,1.3\,\,V,$$ the inversion carrier density is $$4\,\,\, \times \,\,\,{10^{11}}\,\,\,\,c{m^{ - 2}}.$$ What is the value of the inversion carrier density for VG = 1.8 V?
Questions Asked from IC Basics and MOSFET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (1)
GATE ECE 2023 (1)
GATE ECE 2017 Set 1 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (3)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 3 (2)
GATE ECE 2015 Set 1 (2)
GATE ECE 2014 Set 3 (3)
GATE ECE 2014 Set 2 (2)
GATE ECE 2014 Set 1 (1)
GATE ECE 2013 (1)
GATE ECE 2012 (4)
GATE ECE 2009 (2)
GATE ECE 2008 (3)
GATE ECE 2007 (1)
GATE ECE 2006 (1)
GATE ECE 2004 (1)
GATE ECE 2003 (3)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics