1
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 24 English

The gate-source overlap capacitance is approximately

A
0.7 fF
B
0.7 pF
C
0.35 fF
D
0.24 pF
2
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The source of a silicon (ni = 1010 per cm3) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
A
107
B
100
C
10
D
0
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 25 English

The source-body junction capacitance is approximately

A
2 fF
B
7 fF
C
2 pF
D
7 pF
4
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the CMOS circuit shown, electron and hole mobilities are equal, and M1 and M2 are equally sized. The device M1 is in the linear region if GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 26 English
A
V in < 1.875 V
B
1.875 V < V in < 3.125 V
C
V in > 3.125 V
D
0 < V in < 5 V
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12