1
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+2
-0.6
A voltage VG is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300 K. The inversion carrier density (in number of carriers per unit area) for VG = 0.8 V is $$2\,\, \times \,\,{10^{11}}\,\,\,\,\,\,c{m^{ - 2}}$$ . For $${V_G}\,\, = \,\,1.3\,\,V,$$ the inversion carrier density is $$4\,\,\, \times \,\,\,{10^{11}}\,\,\,\,c{m^{ - 2}}.$$ What is the value of the inversion carrier density for VG = 1.8 V?
A
$$4.5 \times {10^{11}}\,\,c{m^{ - 2}}$$
B
$$6.0 \times {10^{11}}\,\,c{m^{ - 2}}$$
C
$$7.2 \times {10^{11}}\,\,c{m^{ - 2}}$$
D
$$8.4 \times {10^{11}}\,\,c{m^{ - 2}}$$
2
GATE ECE 2016 Set 3
Numerical
+2
-0
Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t1 = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t2 =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness teq. If the capacitors are of equal capacitance, then the value of teq (in nm) is ______ GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 7 English 1 GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 7 English 2
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3
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown in the figure, the channel length modulation of all transistors is non-zero $$\left( {\lambda \ne 0} \right)$$. Also all transistors operate in saturation and have negligible body effect. The ac small signal voltage gain $$\left( {{V_0}/{V_{in}}} \right)$$ of the circuit is GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 6 English
A
$$ - {g_{m1}}\left( {{r_{01}}//{r_{02}}//{r_{03}}} \right)$$
B
$$ - {g_{m1}}\left( {{r_{01}}//{1 \over {{g_{m3}}}}//{r_{03}}} \right)$$
C
$$ - {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m2}}}}//\,{r_{02}}} \right)//{r_{03}}} \right)$$
D
$$ - {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m3}}}}//\,{r_{03}}} \right)//{r_{02}}} \right)$$
4
GATE ECE 2016 Set 3
Numerical
+2
-0
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda $$ to be zero, the small signal input pole frequency (in kHz) is _____ GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 5 English
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