An ideal MOS capacitor has boron doping concentration of 10¹⁵ cm^-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given that $${\varepsilon _0} = 80854 \times {10^{ - 14}}F/cm$$ and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/ $$\mu m$$ ) in the oxide region is ______

The slope of the I_D vs. V_GS curve of an n-channel MOSFET in linear region is 10^-3$${\Omega ^{ - 1}}$$ at V_DS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V _GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.

The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of V_B = 2V is (device data for M: device transconductance parameter

k_N = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage V_TN=1V, and neglect body effect and channel length modulation effects)

The source of a silicon (n_i = 10¹⁰ per cm³) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 10¹⁹/cm³, the number of holes in the source region with the above volume is approximately