An ideal MOS capacitor has boron doping concentration of 10¹⁵ cm^-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given that $${\varepsilon _0} = 80854 \times {10^{ - 14}}F/cm$$ and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/ $$\mu m$$ ) in the oxide region is ______

For the MOSFET M₁ shown in the figure, assume W/L =2, V_DD = 2.0 V, $$\mu n$$ C_OX = 100$$\mu {\rm A}/{V^2}$$ and V_TH =0.5 V. The transistor M₁ switches from saturation region to linear regionm when V_in(in Volts) is _____

For the MOSFETs shown in the figure, the threshold voltage |V_t| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of I_D (in mA) is _______

For the n-channel MOS transistor shown in the figure, the threshold voltage V_Th is 0.8V. Neglect channel length modulation effects. When the drain voltage V_D = 1.6 V, the drain current I_D was found to be 0.5 mA.