1
GATE ECE 2016 Set 3
Numerical
+2
-0
Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t1 = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t2 =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness teq. If the capacitors are of equal capacitance, then the value of teq (in nm) is ______
2
GATE ECE 2016 Set 3
Numerical
+2
-0
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda$$ to be zero, the small signal input pole frequency (in kHz) is _____
3
GATE ECE 2016 Set 3
+2
-0.6
In the circuit shown in the figure, the channel length modulation of all transistors is non-zero $$\left( {\lambda \ne 0} \right)$$. Also all transistors operate in saturation and have negligible body effect. The ac small signal voltage gain $$\left( {{V_0}/{V_{in}}} \right)$$ of the circuit is
A
$$- {g_{m1}}\left( {{r_{01}}//{r_{02}}//{r_{03}}} \right)$$
B
$$- {g_{m1}}\left( {{r_{01}}//{1 \over {{g_{m3}}}}//{r_{03}}} \right)$$
C
$$- {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m2}}}}//\,{r_{02}}} \right)//{r_{03}}} \right)$$
D
$$- {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m3}}}}//\,{r_{03}}} \right)//{r_{02}}} \right)$$
4
GATE ECE 2016 Set 1
Numerical
+2
-0
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain conductance (in micro siemens) is__________.