1
GATE ECE 2016 Set 3
Numerical
+2
-0
Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t1 = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t2 =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness teq. If the capacitors are of equal capacitance, then the value of teq (in nm) is ______ GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 10 English 1 GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 10 English 2
Your input ____
2
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown in the figure, the channel length modulation of all transistors is non-zero $$\left( {\lambda \ne 0} \right)$$. Also all transistors operate in saturation and have negligible body effect. The ac small signal voltage gain $$\left( {{V_0}/{V_{in}}} \right)$$ of the circuit is GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 9 English
A
$$ - {g_{m1}}\left( {{r_{01}}//{r_{02}}//{r_{03}}} \right)$$
B
$$ - {g_{m1}}\left( {{r_{01}}//{1 \over {{g_{m3}}}}//{r_{03}}} \right)$$
C
$$ - {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m2}}}}//\,{r_{02}}} \right)//{r_{03}}} \right)$$
D
$$ - {g_{m1}}\left( {{r_{01}}//\left( {{1 \over {{g_{m3}}}}//\,{r_{03}}} \right)//{r_{02}}} \right)$$
3
GATE ECE 2016 Set 3
Numerical
+2
-0
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01 siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation $$\lambda $$ to be zero, the small signal input pole frequency (in kHz) is _____ GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 8 English
Your input ____
4
GATE ECE 2016 Set 2
Numerical
+2
-0
Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of VGS and VDS. Given,
gm = 0.5$$\mu {\rm A}/V$$ for VDS = 50 m V and VGS = 2V,
gd = $$8\mu {\rm A}/V$$ for VGS = 2 V and VDS = 0 V,
Where gm =$${{\partial {{\rm I}_D}} \over {\partial {V_{GS}}}}\,\,and\,\,{g_d}\,\, = \,{{\partial {{\rm I}_D}} \over {\partial {V_{DS}}}}$$

The threshold voltage (in volts) of the transistor is

Your input ____
GATE ECE Subjects
EXAM MAP