1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will
A
remain unchanged
B
decrease
C
change polarity
D
increase
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
A
P-Q-R-S
B
Q-S-R-P
C
R-P-S-Q
D
S-R-Q-P
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