For the NMOSFET in the circuit shown, in the threshold voltage is V_th, where V_th>0. The source voltage V_ss is varied from 0 to V_DD. Neglecting the channel length modulation, the drain current I_D as a function of V_ss is represented by

A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage V_TH = -0.5 V, V_GS = 2.0 V, V_DS = 5 V, W/L=100, C_OX=10^-8 F/cm² and $${\mu _n}$$ = 800 cm²/V-s. The value of the resistance of the voltage controlled resistor (in $$\Omega $$ ) is _____.

For the MOSFETs shown in the figure, the threshold voltage |V_t| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of I_D (in mA) is _______

For the n-channel MOS transistor shown in the figure, the threshold voltage V_Th is 0.8V. Neglect channel length modulation effects. When the drain voltage V_D = 1.6 V, the drain current I_D was found to be 0.5 mA.