1
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+2
-0.6
For the NMOSFET in the circuit shown, in the threshold voltage is Vth, where Vth>0. The source voltage Vss is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of Vss is represented by
A
B
C
D
2
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}}$$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.
3
GATE ECE 2014 Set 3
Numerical
+2
-0
An ideal MOS capacitor has boron doping concentration of 1015 cm-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given that $${\varepsilon _0} = 80854 \times {10^{ - 14}}F/cm$$ and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/ $$\mu m$$ ) in the oxide region is ______
4
GATE ECE 2014 Set 3
Numerical
+2
-0
For the MOSFET M1 shown in the figure, assume W/L =2, VDD = 2.0 V, $$\mu n$$ COX = 100$$\mu {\rm A}/{V^2}$$ and VTH =0.5 V. The transistor M1 switches from saturation region to linear regionm when Vin(in Volts) is _____