For the NMOSFET in the circuit shown, in the threshold voltage is V_th, where V_th>0. The source voltage V_ss is varied from 0 to V_DD. Neglecting the channel length modulation, the drain current I_D as a function of V_ss is represented by

The slope of the I_D vs. V_GS curve of an n-channel MOSFET in linear region is 10^-3$${\Omega ^{ - 1}}$$ at V_DS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V _GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.

An ideal MOS capacitor has boron doping concentration of 10¹⁵ cm^-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given that $${\varepsilon _0} = 80854 \times {10^{ - 14}}F/cm$$ and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/ $$\mu m$$ ) in the oxide region is ______

For the MOSFET M₁ shown in the figure, assume W/L =2, V_DD = 2.0 V, $$\mu n$$ C_OX = 100$$\mu {\rm A}/{V^2}$$ and V_TH =0.5 V. The transistor M₁ switches from saturation region to linear regionm when V_in(in Volts) is _____