1
GATE ECE 2008
+2
-0.6
For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded The current Ix is related to Ibias as
A
$$I_x\;=I_{bias}\;+\;I_s$$
B
$$I_x\;=I_{bias}\;$$
C
$$I_x\;=I_{bias}\;-\;I_s$$
D
$$I_x\;=I_{bias}\;\left(V_{DD}\;-\frac{V_{out}}{R_E}\right)$$
2
GATE ECE 2008
+2
-0.6
The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. Which of the following figures represents the expected dependence of gm on VG?
A
B
C
D
3
GATE ECE 2007
+2
-0.6
In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
Kn = Kp = μnCOX$$\frac{W_n}{L_n}$$ = μpCOX$$\frac{W_P}{L_P}$$= 40 μA/V2 and their threshold voltages are VT = 1 V, the current I is:
A
0 A
B
25 μA
C
45 μA
D
90 μA
4
GATE ECE 2006
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID − VGS curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS = - 6 Volts at ID = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?
A
VGS = -6 Volts
B
VGS = -3 Volts
C
VGS = 0 Volts
D
VGS = 3 Volts
EXAM MAP
Medical
NEET