The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda $$ (in V^-1) is _______

In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________

A MOSFET in saturation has a drain current of 1 mA for V_DS =0.5V. If the channel length modulation coefficient is 0.05 V^-1, the output resistance (in k$$\Omega $$) of the MOSFET is______

For the NMOSFET in the circuit shown, in the threshold voltage is V_th, where V_th>0. The source voltage V_ss is varied from 0 to V_DD. Neglecting the channel length modulation, the drain current I_D as a function of V_ss is represented by