1
GATE ECE 2015 Set 3
Numerical
+2
-0
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda $$ (in V-1) is _______
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2
GATE ECE 2015 Set 1
Numerical
+2
-0
A MOSFET in saturation has a drain current of 1 mA for VDS =0.5V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in k$$\Omega $$) of the MOSFET is______
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3
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+2
-0.6
For the NMOSFET in the circuit shown, in the threshold voltage is Vth, where Vth>0. The source voltage Vss is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of Vss is represented by GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English
A
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 1
B
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 2
C
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 3
D
GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 12 English Option 4
4
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.
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