1
GATE ECE 2015 Set 3
Numerical
+2
-0
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda$$ (in V-1) is _______
2
GATE ECE 2015 Set 1
Numerical
+2
-0
A MOSFET in saturation has a drain current of 1 mA for VDS =0.5V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in k$$\Omega$$) of the MOSFET is______
3
GATE ECE 2015 Set 1
+2
-0.6
For the NMOSFET in the circuit shown, in the threshold voltage is Vth, where Vth>0. The source voltage Vss is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of Vss is represented by
A
B
C
D
4
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}}$$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.