GATE ECE 2008 | IC Basics and MOSFET Question 52 | Electronic Devices and VLSI

GATE ECE 2008

MCQ (Single Correct Answer)

-0.6

Two identical NMOS transistors M₁ and M₂ are connected as shown below. V_bias is chosen so that both transistors are in saturation. The equivalent g_m of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant V_out. The equivalent g_m of the pair is GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 34 English

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 34 English

The sum of individual g_m’s of the transistors

The product of individual g_m’s of the transistors

Nearly equal to the g_m of M₁

Nearly equal to g_m/g₀ of M₂

GATE ECE 2008

MCQ (Single Correct Answer)

-0.6

For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English

The current I_x is related to I_bias as

$$I_x\;=I_{bias}\;+\;I_s$$

$$I_x\;=I_{bias}\;$$

$$I_x\;=I_{bias}\;-\;I_s$$

$$I_x\;=I_{bias}\;\left(V_{DD}\;-\frac{V_{out}}{R_E}\right)$$

GATE ECE 2008

MCQ (Single Correct Answer)

-0.6

The measured transconductance g_m of an NMOS transistor operating in the linear region is plotted against the gate voltage V_G at constant drain voltage V_D. Which of the following figures represents the expected dependence of g_m on V_G?

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English Option 1

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English Option 2

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English Option 3

GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English Option 4

GATE ECE 2007

MCQ (Single Correct Answer)

-0.6

In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
K_n = K_p = μ_nC_OX$$\frac{W_n}{L_n}$$ = μ_pC_OX$$\frac{W_P}{L_P}$$= 40 μA/V² and their threshold voltages are V_T = 1 V, the current I is: GATE ECE 2007 Electronic Devices and VLSI - IC Basics and MOSFET Question 35 English