Two identical NMOS transistors M₁ and M₂ are connected as shown below. V_bias is chosen so that both transistors are in saturation. The equivalent g_m of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant V_out. The equivalent g_m of the pair is

The measured transconductance g_m of an NMOS transistor operating in the linear region is plotted against the gate voltage V_G at constant drain voltage V_D. Which of the following figures represents the expected dependence of g_m on V_G?

In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
K_n = K_p = μ_nC_OX$$\frac{W_n}{L_n}$$ = μ_pC_OX$$\frac{W_P}{L_P}$$= 40 μA/V² and their threshold voltages are V_T = 1 V, the current I is:

An n-channel depletion MOSFET has following two points on its I_D − V_GS curve:
(i) V_GS = 0 at I_D = 12 mA and
(ii) V_GS = - 6 Volts at I_D = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?