1
GATE ECE 2008
+2
-0.6
Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias is chosen so that both transistors are in saturation. The equivalent gm of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant Vout. The equivalent gm of the pair is
A
The sum of individual gm’s of the transistors
B
The product of individual gm’s of the transistors
C
Nearly equal to the gm of M1
D
Nearly equal to gm/g0 of M2
2
GATE ECE 2008
+2
-0.6
For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded The current Ix is related to Ibias as
A
$$I_x\;=I_{bias}\;+\;I_s$$
B
$$I_x\;=I_{bias}\;$$
C
$$I_x\;=I_{bias}\;-\;I_s$$
D
$$I_x\;=I_{bias}\;\left(V_{DD}\;-\frac{V_{out}}{R_E}\right)$$
3
GATE ECE 2008
+2
-0.6
The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. Which of the following figures represents the expected dependence of gm on VG?
A
B
C
D
4
GATE ECE 2007
+2
-0.6
In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
Kn = Kp = μnCOX$$\frac{W_n}{L_n}$$ = μpCOX$$\frac{W_P}{L_P}$$= 40 μA/V2 and their threshold voltages are VT = 1 V, the current I is:
A
0 A
B
25 μA
C
45 μA
D
90 μA
EXAM MAP
Medical
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