A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV, E_c - E_F = 0.9 eV; where E_c and E_F are conduction band minimum and the Fermi energy levels of Si, respectively. Oxide$${\varepsilon _r} = \,\,3.9,\,\,\,{\varepsilon _{0\,\,}}=\,8.85 \times {10^{ - 14}}$$ F/cm, oxide thickness $${t_{ox}} = 0.1\,\mu m$$ and electronic charge q = $$1.6 \times {10^{ - 19}}$$ C. If the measured flat band voltage of the capacitor is –1V, then the magnitude of the fixed charge at the oxide semiconductor interface, in nC/cm², is __________.

Assuming that transistor M₁ and M₂ are identical and have a threshold voltage of 1V, the state of transistors M₁ and M₂ are respectively

For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage V_tn = 1 V and its trans-conductance parameter $${\mu _n}{C_{ox}}\left( {{W \over L}} \right) = 1m{\rm A}/{V^2}.$$ Neglect channel length modulation and body bias effects. Under these conditions the drain current I_D in mA is______.

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V_GS and V_DS. Given,
g_m = 0.5$$\mu {\rm A}/V$$ for V_DS = 50 m V and V_GS = 2V,
g_d = $$8\mu {\rm A}/V$$ for V_GS = 2 V and V_DS = 0 V,
Where g_m =$${{\partial {{\rm I}_D}} \over {\partial {V_{GS}}}}\,\,and\,\,{g_d}\,\, = \,{{\partial {{\rm I}_D}} \over {\partial {V_{DS}}}}$$

The threshold voltage (in volts) of the transistor is