1
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The intrinsic carrier concentration of silicon sample at 300oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is
2
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The band gap of silicon at 300 K is
3
GATE ECE 1997
MCQ (Single Correct Answer)
+1
-0.3
The units of $$\frac q{KT}$$ are
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
GATE ECE Subjects
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Control Systems
Engineering Mathematics
Analog Circuits
Network Theory
Electromagnetics
Electronic Devices and VLSI
Digital Circuits
Microprocessors
Signals and Systems
Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Representation of Continuous Time Signal Fourier Series Transmission of Signal Through Continuous Time LTI Systems Miscellaneous Sampling Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Discrete Time Signal Z Transform Transmission of Signal Through Discrete Time Lti Systems
Communications
General Aptitude