Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 10^{17} cm^{$$-$$3} and the intrinsic carrier concentration is 10^{10} cm^{$$-$$3}. Electron and hole diffusion lengthss are 2 $$\mu$$m and 1 $$\mu$$m, respectively. The left side of the bar (x = 0) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor. Excess electron-hole pairs are generated ONLY at x = 0 because of the laser. The steady state electron density at x = 0 is 10^{14} cm^{$$-$$3} due to laser illumination. Under these conditions and ignoring electric field, the closest approximation (among the given options) of the steady state electron density at x = 2 $$\mu$$m, is _____________.

In a non-degenerate bulk semiconductor with electron density n = 10^{16} cm^{$$-$$3}, the value of E_{C} $$-$$ E_{Fn} = 200 meV, where E_{C} and E_{Fn} denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10^{10} cm^{$$-$$3}. For n = 0.5 $$\times$$ 10^{16} cm^{$$-$$3}, the closest approximation of the value of (E_{C} $$-$$ E_{Fn}), among the given options is _________.

Select the CORRECT statements regarding semiconductor devices