1
GATE ECE 2015 Set 1
Numerical
+1
-0
A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample $$\left(in\;\Omega-cm\right)$$ is _____________.
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2
GATE ECE 2014 Set 4
Numerical
+1
-0
The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 1.1 eV is ________.
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3
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+1
-0.3
In the figure ln(ρi) is plotted as a function of 1/T, where ρi the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 35 English

The slope of the line can be used to estimate

A
Band gap energy of silicon (Eg)
B
Sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)$$
C
Reciprocal of the sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)^{-1}$$
D
Intrinsic carrier concentration of silicon (ni)
4
GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
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