A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample $$\left(in\;\Omega-cm\right)$$ is _____________.

In the figure ln(ρ_i) is plotted as a function of 1/T, where ρ_i the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear.

The slope of the line can be used to estimate

The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap E_g= 1.1 eV is ________.

At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant D_p in cm²/s is__________.