1
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
Drift current in the semiconductors depends upon
A
only the electric field
B
only the carrier concentration gradient
C
both the electric field and the carrier concentration
D
both the electric field and the carrier concentration gradient
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
A
A silicon wafer heavily doped with boron is a p+ substrate
B
A silicon wafer lightly doped with boron is a p+ substrate
C
A silicon wafer heavily doped with arsenic is a p+ substrate
D
A silicon wafer lightly doped with arsenic is a p+ substrate
3
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
4
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
A
directly proportional to the doping concentration
B
inversely proportional to the doping concentration
C
directly proportional to the intrinsic concentration
D
inversely proportional to the intrinsic concentration
GATE ECE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12