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1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
A
A silicon wafer heavily doped with boron is a p+ substrate
B
A silicon wafer lightly doped with boron is a p+ substrate
C
A silicon wafer heavily doped with arsenic is a p+ substrate
D
A silicon wafer lightly doped with arsenic is a p+ substrate
2
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
A
directly proportional to the doping concentration
B
inversely proportional to the doping concentration
C
directly proportional to the intrinsic concentration
D
inversely proportional to the intrinsic concentration
3
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
4
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
A
1.3 eV
B
0.7 eV
C
1.1 eV
D
1.4 eV
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Control Systems
Basic of Control Systems Signal Flow Graph and Block Diagram Time Response Analysis Stability Root Locus Diagram Frequency Response Analysis Compensators State Space Analysis
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Frequency Response Operational Amplifier Power Amplifier Diodes Oscillators Feedback Amplifier 555 Timer Bipolar Junction Transistor FET and MOSFET
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Pin Details of 8085 and Interfacing with 8085 Instruction Set and Programming with 8085
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