1
GATE ECE 2025
MCQ (More than One Correct Answer)
+1
-0

Which of the following can be used as an n-type dopant for silicon?

Select the correct option(s).

A
Arsenic
B
Boron
C
Gallium
D
Phosphorous
2
GATE ECE 2024
MCQ (Single Correct Answer)
+1
-0.33

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature ($T$) dependence of free electron concentration ($n$)?

A
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 1
B
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 2
C
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 3
D
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 4
3
GATE ECE 2024
MCQ (More than One Correct Answer)
+1
-0

The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions. Which of the following statements is/are true?

GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 5 English
A

For $x$ between B and C, the electron diffusion current is directed from C to B.

B

For $x$ between B and A, the electron drift current is directed from B to A.

C

For $x$ between B and C, the electric field is directed from B to C.

D

For $x$ between B and A, the electric field is directed from A to B.

4
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as

A
degenerate n-type.
B
degenerate p-type.
C
non-degenerate n-type.
D
non-degenerate p-type.
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