1
GATE ECE 1997
MCQ (Single Correct Answer)
+1
-0.3
The units of $$\frac q{KT}$$ are
A
V
B
V-1
C
J
D
J/K
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any temperature (> 0 K)
A
$$0$$
B
1
C
0.5
D
1.0
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
A
is proportional to the electric field for all values of electric field
B
is independent of the electric field
C
increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance.
D
increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$. If the intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
A
Zero
B
$$10^{10}/cm^3$$
C
$$10^{5}/cm^3$$
D
$$1.5\times10^{25}/cm^3$$
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