1
GATE ECE 1997
MCQ (Single Correct Answer)
+1
-0.3
The units of $$\frac q{KT}$$ are
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any
temperature (> 0 K)
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$.
If the
intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
GATE ECE Subjects
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General Aptitude
Network Theory
Microprocessors
Signals and Systems
Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Representation of Continuous Time Signal Fourier Series Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Continuous Time Linear Invariant System Discrete Time Signal Z Transform Sampling
Electromagnetics
Digital Circuits
Electronic Devices and VLSI
Control Systems
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Engineering Mathematics