1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$. If the intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
A
Zero
B
$$10^{10}/cm^3$$
C
$$10^{5}/cm^3$$
D
$$1.5\times10^{25}/cm^3$$
2
GATE ECE 1994
True or False
+1
-0
A p-type silicon sample has a higher conductivity compared to an n-type sample having the same dopant concentration.
A
TRUE
B
FALSE
3
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm2/volt-sec) will be
A
1,000
B
2,000
C
5,000
D
500,000
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